Discrete Semiconductor Products

GSXF060A120S1-D3

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DIODE MODULE GP 1200V 60A SOT227

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Discrete Semiconductor Products

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DIODE MODULE GP 1200V 60A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	GSXF060A120S1-D3

Current - Average Rectified (Io) (per Diode)	60 A
Current - Reverse Leakage @ Vr	25 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	90 ns
Speed	500 ns, 200 mA
Supplier Device Package	SOT-227
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.35 V

Part	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Technology	Current - Reverse Leakage @ Vr	Diode Configuration	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If
SemiQ GSXF060A020S1-D3	75 ns	175 ░C	-55 °C	60 A	SOT-227	Standard	25 µA	2 Independent	Chassis Mount	200 V	200 mA 500 ns	SOT-227-4 miniBLOC	1 V
SemiQ GSXF060A120S1-D3	90 ns	175 ░C	-55 °C	60 A	SOT-227	Standard	25 µA	2 Independent	Chassis Mount	1.2 kV	200 mA 500 ns	SOT-227-4 miniBLOC	2.35 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 1200 V 60A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources