Discrete Semiconductor Products

2SJ360(F)

Obsolete

MOSFET P-CH 60V 1A PW-MINI

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 1A PW-MINI

Technical Specifications

Parameters and characteristics for this part

Specification	2SJ360(F)

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	155 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	730 mOhm
Supplier Device Package	PW-MINI
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature	FET Type	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Toshiba Semiconductor and Storage 2SJ360(F)	Surface Mount	20 V	60 V	MOSFET (Metal Oxide)	730 mOhm	PW-MINI	150 °C	P-Channel	2 V	TO-243AA	6.5 nC	500 mW	1 A	155 pF	4 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.60

General part information

P-Channel 60 V 1A (Ta) 500mW (Ta) Surface Mount PW-MINI

Technical documentation and resources