2SJ360 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET P-CH 60V 1A PW-MINI
| Part | Mounting Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature | FET Type | Vgs(th) (Max) @ Id | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Surface Mount | 20 V | 60 V | MOSFET (Metal Oxide) | 730 mOhm | PW-MINI | 150 °C | P-Channel | 2 V | TO-243AA | 6.5 nC | 500 mW | 1 A | 155 pF | 4 V | 10 V |