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TO-247-3
Discrete Semiconductor Products

NGTB30N120FL2WG

Obsolete
ON Semiconductor

IGBT TRENCH/FS 1200V 60A TO247

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Search across all available documentation for this part.

DocumentsDatasheetPackage Drawing-340AL-TO-247+1
TO-247-3
Discrete Semiconductor Products

NGTB30N120FL2WG

Obsolete
ON Semiconductor

IGBT TRENCH/FS 1200V 60A TO247

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-340AL-TO-247+1

Technical Specifications

Parameters and characteristics for this part

SpecificationNGTB30N120FL2WG
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Pulsed (Icm)120 A
Gate Charge220 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]452 W
Reverse Recovery Time (trr)240 ns
Supplier Device PackageTO-247
Switching Energy2.6 mJ, 700 µJ
Td (on/off) @ 25°C210 ns, 98 ns
Test Condition600 V, 30 A, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

NGTB30N135IHR1 Series

IGBT, 1350V 30A with Monolithic Free Wheeling Diode.

PartIGBT TypeReverse Recovery Time (trr)Package / CaseCurrent - Collector Pulsed (Icm)Voltage - Collector Emitter Breakdown (Max)Operating Temperature [Min]Operating Temperature [Max]Current - Collector (Ic) (Max) [Max]Test ConditionGate ChargePower - Max [Max]Mounting TypeSwitching EnergySupplier Device PackageVce(on) (Max) @ Vge, IcTd (on/off) @ 25°CVoltage - Collector Emitter Breakdown (Max) [Max]Td (on/off) @ 25°CTd (on/off) @ 25°CTd (on/off) @ 25°C [custom]Td (on/off) @ 25°C [custom]
TO-247-3
ON Semiconductor
NGTB30N65IHL2WG
Trench Field Stop
430 ns
TO-247-3
120 A
650 V
-55 °C
175 ░C
60 A
10 Ohm
15 V
30 A
400 V
135 nC
300 W
Through Hole
200 µJ
TO-247-3
2.2 V
onsemi-NGTG15N120FL2WG IGBT Chip Trans IGBT Chip N-CH 1200V 30A 294W 3-Pin(3+Tab) TO-247 Tube
ON Semiconductor
NGTB30N120IHSWG
Trench Field Stop
TO-247-3
200 A
-55 °C
150 °C
60 A
10 Ohm
15 V
30 A
600 V
220 nC
192 W
Through Hole
1 mJ
TO-247-3
2.4 V
-/210ns
1200 V
TO-247-3
ON Semiconductor
NGTB30N60FLWG
Trench Field Stop
72 ns
TO-247-3
120 A
-55 °C
150 °C
60 A
10 Ohm
15 V
30 A
400 V
170 nC
250 W
Through Hole
280 µJ
700 µJ
TO-247
1.9 V
600 V
83 ns
170 ns
TO-247-3
ON Semiconductor
NGTB30N120LWG
Trench Field Stop
TO-247-3
240 A
-55 °C
150 °C
60 A
10 Ohm
15 V
30 A
600 V
420 nC
560 W
Through Hole
1 mJ
4.4 mJ
TO-247-3
2.2 V
1200 V
136 ns
360 ns
TO-247-3
ON Semiconductor
NGTB30N120IHLWG
Trench Field Stop
TO-247-3
320 A
-55 °C
150 °C
60 A
10 Ohm
15 V
30 A
600 V
420 nC
260 W
Through Hole
1 mJ
TO-247-3
2.2 V
-
1200 V
360 ns
TO-247-3
ON Semiconductor
NGTB30N120FL2WG
Trench Field Stop
240 ns
TO-247-3
120 A
-55 °C
175 ░C
60 A
10 Ohm
15 V
30 A
600 V
220 nC
452 W
Through Hole
2.6 mJ
700 µJ
TO-247
2.3 V
1200 V
98 ns
210 ns
TO-247-3
ON Semiconductor
NGTB30N135IHR1WG
Trench Field Stop
TO-247-3
120 A
-40 C
175 °C
60 A
10 Ohm
15 V
30 A
600 V
220 nC
394 W
Through Hole
630 µJ
TO-247-3
3 V
1350 V
-
200 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NGTB30N135IHR1 Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.