Discrete Semiconductor Products

NGTB30N120LWG

Obsolete

ON Semiconductor

IGBT 1200V 30A FS1 GEN MKT

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DocumentsDatasheet Package Drawing-340L-02-TO-247 +1

Discrete Semiconductor Products

NGTB30N120LWG

Obsolete

ON Semiconductor

IGBT 1200V 30A FS1 GEN MKT

Deep-Dive with AI

DocumentsDatasheet Package Drawing-340L-02-TO-247 +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NGTB30N120LWG

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	240 A
Gate Charge	420 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	560 W
Supplier Device Package	TO-247-3
Switching Energy	1 mJ, 4.4 mJ
Td (on/off) @ 25°C	136 ns, 360 ns
Test Condition	600 V, 30 A, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

NGTB30N135IHR1 Series

IGBT, 1350V 30A with Monolithic Free Wheeling Diode.

Part	IGBT Type	Reverse Recovery Time (trr)	Package / Case	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Test Condition	Gate Charge	Power - Max [Max]	Mounting Type	Switching Energy	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
ON Semiconductor NGTB30N65IHL2WG	Trench Field Stop	430 ns	TO-247-3	120 A	650 V	-55 °C	175 ░C	60 A	10 Ohm 15 V 30 A 400 V	135 nC	300 W	Through Hole	200 µJ	TO-247-3	2.2 V
ON Semiconductor NGTB30N120IHSWG	Trench Field Stop		TO-247-3	200 A		-55 °C	150 °C	60 A	10 Ohm 15 V 30 A 600 V	220 nC	192 W	Through Hole	1 mJ	TO-247-3	2.4 V	-/210ns	1200 V
ON Semiconductor NGTB30N60FLWG	Trench Field Stop	72 ns	TO-247-3	120 A		-55 °C	150 °C	60 A	10 Ohm 15 V 30 A 400 V	170 nC	250 W	Through Hole	280 µJ 700 µJ	TO-247	1.9 V		600 V	83 ns 170 ns
ON Semiconductor NGTB30N120LWG	Trench Field Stop		TO-247-3	240 A		-55 °C	150 °C	60 A	10 Ohm 15 V 30 A 600 V	420 nC	560 W	Through Hole	1 mJ 4.4 mJ	TO-247-3	2.2 V		1200 V	136 ns 360 ns
ON Semiconductor NGTB30N120IHLWG	Trench Field Stop		TO-247-3	320 A		-55 °C	150 °C	60 A	10 Ohm 15 V 30 A 600 V	420 nC	260 W	Through Hole	1 mJ	TO-247-3	2.2 V	-	1200 V		360 ns
ON Semiconductor NGTB30N120FL2WG	Trench Field Stop	240 ns	TO-247-3	120 A		-55 °C	175 ░C	60 A	10 Ohm 15 V 30 A 600 V	220 nC	452 W	Through Hole	2.6 mJ 700 µJ	TO-247	2.3 V		1200 V	98 ns 210 ns
ON Semiconductor NGTB30N135IHR1WG	Trench Field Stop		TO-247-3	120 A		-40 C	175 °C	60 A	10 Ohm 15 V 30 A 600 V	220 nC	394 W	Through Hole	630 µJ	TO-247-3	3 V		1350 V			-	200 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NGTB30N135IHR1 Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.