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2N1893
Discrete Semiconductor Products

2N1711

Active
Microchip Technology

TRANS GP BJT NPN 30V 0.5A 800MW 3-PIN TO-5 TRAY

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2N1893
Discrete Semiconductor Products

2N1711

Active
Microchip Technology

TRANS GP BJT NPN 30V 0.5A 800MW 3-PIN TO-5 TRAY

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N1711
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Power - Max [Max]800 mW
Supplier Device PackageTO-5AA
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 24.55
Microchip DirectN/A 1$ 26.45
NewarkEach 100$ 24.56
500$ 23.61

Description

General part information

2N1711-Transistor Series

This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225.The device packages for the encapsulated device types are as follows: (2N1711 and 2N1890) Three terminal round metal can TO-205AD (formerly TO-39) and TO-205-AA (formerly TO-5).

Documents

Technical documentation and resources