Discrete Semiconductor Products

STP18N55M5

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STMicroelectronics

N-CHANNEL 550 V, 0.150 OHM TYP., 16 A MDMESH M5 POWER MOSFET IN DPAK PACKAGE

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DocumentsSTP18N55M5 | Datasheet +17

Discrete Semiconductor Products

STP18N55M5

Active

STMicroelectronics

N-CHANNEL 550 V, 0.150 OHM TYP., 16 A MDMESH M5 POWER MOSFET IN DPAK PACKAGE

Deep-Dive with AI

DocumentsSTP18N55M5 | Datasheet +17

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP18N55M5

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1260 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	192 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STP18N55M5 Series

N-channel 550 V, 0.150 Ohm typ., 16 A MDmesh M5 Power MOSFET in DPAK package

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STP18N55M5	N-Channel	16 A	192 mOhm	Through Hole	TO-220	TO-220-3	5 V	MOSFET (Metal Oxide)	25 V	1260 pF	10 V	550 V	110 W	150 °C	31 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	799	$ 3.50

Description

General part information

STP18N55M5 Series

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.