Discrete Semiconductor Products

PJC7439-AU_R1_000A1

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SOT-323, MOSFET

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Discrete Semiconductor Products

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SOT-323, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJC7439-AU_R1_000A1

Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	51 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-323, SC-70
Power Dissipation (Max)	350 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Grade
Panjit International Inc. PJC7439_R1_00001	MOSFET (Metal Oxide)	4 Ohm	51 pF	150 °C	-55 °C	20 V	250 mA	SC-70 SOT-323	60 V	1.1 nC	P-Channel	2.5 V	350 mW	SOT-323	Surface Mount	2.5 V 10 V
Panjit International Inc. PJC7439-AU_R1_000A1	MOSFET (Metal Oxide)	4 Ohm	51 pF	150 °C	-55 °C	20 V	250 mA	SC-70 SOT-323	60 V	1.1 nC	P-Channel	2.5 V	350 mW	SOT-323	Surface Mount	2.5 V 10 V	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 250mA (Ta) 350mW (Ta) Surface Mount SOT-323

Technical documentation and resources

No documents available