Discrete Semiconductor Products

PJC7439_R1_00001

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60V P-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJC7439_R1_00001

Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.1 nC
Input Capacitance (Ciss) (Max) @ Vds	51 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs [Max]	4 Ohm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)
Panjit International Inc. PJC7439_R1_00001	250 mA	51 pF	MOSFET (Metal Oxide)	SC-70 SOT-323	1.1 nC	Surface Mount	10 V	2.5 V	350 mW	4 Ohm	20 V	2.5 V	SOT-323	-55 °C	150 °C	P-Channel	60 V

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General part information

P-Channel 60 V 250mA (Ta) 350mW (Ta) Surface Mount SOT-323

Technical documentation and resources