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Technical Specifications
Parameters and characteristics for this part
| Specification | NGTD13T65F2WP |
|---|---|
| Current - Collector Pulsed (Icm) | 120 A |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | Die |
| Supplier Device Package | Die |
| Vce(on) (Max) @ Vge, Ic | 2.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NGTD13T65F2 Series
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.
Documents
Technical documentation and resources