Catalog
IGBT, 650V 30A FS2 bare die
Key Features
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Optimized for High Speed Switching
• 10 µs Short Circuit Capability
• These are Pb−Free Devices
Description
AI
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.