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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3720 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 hFE |
| Frequency - Transition | 60 MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 6 W |
| Supplier Device Package | TO-5AA |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 17.14 | |
| Microchip Direct | N/A | 1 | $ 18.46 | |
| Newark | Each | 100 | $ 17.14 | |
| 500 | $ 16.50 | |||
Description
General part information
2N3720-Transistor Series
This family of 2N3719 through 2N3720 power PNP transistors are produced in a PLANAR process. These transistors are available in TO-205AA (TO-5) packaging. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.
Documents
Technical documentation and resources