Specification	NSB9435T1

Current - Collector (Ic) (Max) [Max]	3 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	125
Frequency - Transition	110 MHz
Mounting Type	Surface Mount
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	3 W
Resistor - Base (R1)	10 kOhms
Supplier Device Package	SOT-223 (TO-261)
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	210 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

NSB9435 Series

PNP Bipolar Digital Transistor (BRT)

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Resistor - Base (R1)	Power - Max [Max]
ON Semiconductor NSB9435T1	SOT-223 (TO-261)	125	110 MHz	210 mV	TO-261-4 TO-261AA	3 A	PNP - Pre-Biased	30 V	Surface Mount	10 kOhms	3 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	2959	$ 0.10

Description

General part information

NSB9435 Series

This digital transistor is designed to replace a single device and its external resistor bias network. The bipolar digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. This eliminates these individual components by integrating them into a single device and can reduce both system cost and board space.