NSB9435 Series

PNP Bipolar Digital Transistor (BRT)

Catalog

PNP Bipolar Digital Transistor (BRT)

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Resistor - Base (R1)	Power - Max [Max]
ON Semiconductor NSB9435T1	SOT-223 (TO-261)	125	110 MHz	210 mV	TO-261-4 TO-261AA	3 A	PNP - Pre-Biased	30 V	Surface Mount	10 kOhms	3 W

Catalog

PNP Bipolar Digital Transistor (BRT)

Key Features

• Collector-Emitter Sustaining Voltage - VCEO(sus)= 30 Vdc (Min) @ IC= 10 mAdc

• High DC Current Gain -hFE= 125 (Min) @ IC= 0.8 Adc= 90 (Min) @ IC= 3.0 Adc

• Low Collector-Emitter Saturation Voltage - VCE(sat)= 0.275 Vdc (Max) @ IC= 1.2 Adc= 0.55 Vdc (Max) @ IC= 3.0 Adc

• SOT-223 Surface Mount Packaging

• ESD Rating - Human Body Model: Class 1B- Machine Model: Class B

• Pb-Free Package is Available

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101Qualified and PPAP Capable

Description

This digital transistor is designed to replace a single device and its external resistor bias network. The bipolar digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. This eliminates these individual components by integrating them into a single device and can reduce both system cost and board space.