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ONSEMI FDMA1032CZ
Discrete Semiconductor Products

FDMA1032CZ

Active
ON Semiconductor

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 3.7 A, 3.7 A, 0.037 OHM

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ONSEMI FDMA1032CZ
Discrete Semiconductor Products

FDMA1032CZ

Active
ON Semiconductor

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 3.7 A, 3.7 A, 0.037 OHM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMA1032CZ
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C3.7 A, 3.1 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs6 nC
Input Capacitance (Ciss) (Max) @ Vds340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-VDFN Exposed Pad
Power - Max [Max]700 mW
Rds On (Max) @ Id, Vgs68 mOhm
Supplier Device Package6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.00
10$ 0.81
100$ 0.63
500$ 0.54
1000$ 0.44
Digi-Reel® 1$ 1.00
10$ 0.81
100$ 0.63
500$ 0.54
1000$ 0.44
Tape & Reel (TR) 3000$ 0.41
6000$ 0.39
9000$ 0.37
NewarkEach (Supplied on Full Reel) 3000$ 0.44
6000$ 0.42
12000$ 0.41
ON SemiconductorN/A 1$ 0.18

Description

General part information

FDMA1032CZ Series

This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications.