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1N5806TR
Discrete Semiconductor Products

JANTXV1N6074

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Microchip Technology

DIODE GP 100V 850MA A AXIAL

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Documents1N6073-81.
1N5806TR
Discrete Semiconductor Products

JANTXV1N6074

Active
Microchip Technology

DIODE GP 100V 850MA A AXIAL

Deep-Dive with AI

Documents1N6073-81.

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV1N6074
Current - Average Rectified (Io)850 mA
Current - Reverse Leakage @ Vr1 µA
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]155 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseA, Axial
QualificationMIL-PRF-19500/503
Reverse Recovery Time (trr)30 ns
Speed200 mA, 500 ns
Supplier Device PackageA, Axial
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If2.04 V
PartSupplier Device PackageCurrent - Average Rectified (Io)Operating Temperature - Junction [Min]Operating Temperature - Junction [Max]Reverse Recovery Time (trr)Voltage - Forward (Vf) (Max) @ IfTechnologyCurrent - Reverse Leakage @ VrPackage / CaseSpeedVoltage - DC Reverse (Vr) (Max) [Max]Mounting TypeGradeQualification
1N5806TR
Microchip Technology
A
Axial
850 mA
-65 C
155 °C
30 ns
2.04 V
Standard
1 µA
A
Axial
200 mA
500 ns
100 V
Through Hole
Microchip Technology-JANTXV1N6463US Transient Voltage Suppressors (TVS) TVS Diode Single Uni-Dir 12V 500W 2-Pin E-MELF Bag
Microchip Technology
D-5A
3 A
-65 C
155 °C
30 ns
2.04 V
Standard
1 µA
200 mA
500 ns
100 V
Surface Mount
1N5806TR
Microchip Technology
A
Axial
850 mA
-65 C
155 °C
30 ns
2.04 V
Standard
1 µA
A
Axial
200 mA
500 ns
100 V
Through Hole
Military
MIL-PRF-19500/503
1N5806TR
Microchip Technology
850 mA
-65 C
155 °C
30 ns
2.04 V
Standard
1 µA
A
Axial
200 mA
500 ns
100 V
Through Hole
Military
MIL-PRF-19500/503

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 15.82
Microchip DirectN/A 1$ 17.04

Description

General part information

JANTXV1N6074-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/503 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (TL =70ºC) in different package sizes for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6073US thru 1N6081US). microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources