Specification	2N6352

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	1 µA
Mounting Type	Through Hole
Package / Case	TO-66-3, TO-213AA
Power - Max [Max]	2 W
Supplier Device Package	TO-66 (TO-213AA)
Vce Saturation (Max) @ Ib, Ic [Max]	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

JANTX2N6352-Darlington Series

Darlington NPN Silicon Power 80V to 150V, 5A

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Supplier Device Package	Grade	Qualification	Package / Case	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]
Microchip Technology JANTX2N6352	80 V	Through Hole	1.5 V	2 W	TO-66 (TO-213AA)	Military	MIL-PRF-19500/472	TO-213AA TO-66-2	5 A
Microchip Technology 2N6352	80 V	Through Hole		2 W	TO-66 (TO-213AA)			TO-213AA TO-66-3	5 A	1 µA	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 29.29
Microchip Direct	N/A	1	$ 31.54
Newark	Each	100	$ 29.29
		500	$ 28.16

Description

General part information

JANTX2N6352-Darlington Series

This specification covers the performance requirements for NPN silicon power Darlington, 2N6350, 2N6351, 2N6352 and 2N6353 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/472. One level of product assurance (JANHC) is provided for each unencapsulated device type as specified in MIL-PRF-19500/472.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

2N6352 and 2N6353

Data Sheets