Specification	STW38N65M5

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	71 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	190 W
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STW38N65M5 Series

N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-247 package

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature
STMicroelectronics STW38N65M5	95 mOhm	TO-247-3	650 V	30 A	TO-247-3	Through Hole	190 W	3000 pF	MOSFET (Metal Oxide)	71 nC	N-Channel	25 V	10 V	5 V	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	247	$ 5.06
Newark	Each	1	$ 4.72
		10	$ 4.44
		25	$ 4.20

Description

General part information

STW38N65M5 Series

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.