Zenode.ai Logo
Beta
SG6858TZ
Discrete Semiconductor Products

FDC2512

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 150V 1.4A, 425MΩ

Deep-Dive with AI

Search across all available documentation for this part.

SG6858TZ
Discrete Semiconductor Products

FDC2512

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 150V 1.4A, 425MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC2512
Current - Continuous Drain (Id) @ 25°C1.4 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]11 nC
Input Capacitance (Ciss) (Max) @ Vds344 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs425 mOhm
Supplier Device PackageSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FDC2512 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.