FDC2512 Series

N-Channel PowerTrench® MOSFET 150V 1.4A, 425mΩ

Catalog

N-Channel PowerTrench® MOSFET 150V 1.4A, 425mΩ

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDC2512-P	SOT-23-6 Thin TSOT-23-6	344 pF	11 nC	MOSFET (Metal Oxide)	4 V	N-Channel	20 V	1.4 A	425 mOhm	150 V	6 V 10 V	Surface Mount	SuperSOT™-6	-55 °C	150 °C
ON Semiconductor FDC2512	SOT-23-6 Thin TSOT-23-6	344 pF	11 nC	MOSFET (Metal Oxide)	4 V	N-Channel	20 V	1.4 A	425 mOhm	150 V	6 V 10 V	Surface Mount	SuperSOT™-6	-55 °C	150 °C

Catalog

N-Channel PowerTrench® MOSFET 150V 1.4A, 425mΩ

Key Features

• 1.4 A, 150 V

• RDS(on)= 425 mΩ@ VGS= 10 V

• RDS(on)= 475 mΩ @ VGS= 6 V

• High performance trench technology for extremely low RDS(ON)

• Low gate charge (8nC typical)

• High power and current handling capability

• Fast switching speed

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.