Discrete Semiconductor Products

SQ2309ES-T1_BE3

Obsolete

MOSFET P-CH 60V 1.7A SOT23-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 1.7A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2309ES-T1_BE3

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	265 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	335 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SQ2309ES-T1_BE3	MOSFET (Metal Oxide)	1.7 A	20 V	335 mOhm	SC-59 SOT-23-3 TO-236-3	SOT-23-3 (TO-236)	-55 °C	175 ░C	AEC-Q101	Surface Mount	8.5 nC	4.5 V 10 V	60 V	2.5 V	2 W	P-Channel	Automotive	265 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 1.7A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources

No documents available