SQ2309 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 60V 1.7A SOT23-3
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Qualification | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | FET Type | Grade | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 1.7 A | 20 V | 335 mOhm | SC-59 SOT-23-3 TO-236-3 | SOT-23-3 (TO-236) | -55 °C | 175 ░C | AEC-Q101 | Surface Mount | 8.5 nC | 4.5 V 10 V | 60 V | 2.5 V | 2 W | P-Channel | Automotive | 265 pF |