Discrete Semiconductor Products

SDUR30Q60W

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DIODE GEN PURP 600V 30A TO247AC

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Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 30A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SDUR30Q60W

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	40 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Mounting Type	Speed	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
SMC Diode Solutions SDUR30Q60W	Through Hole	200 mA 500 ns	Standard	10 µA	TO-247AC	TO-247-2	30 A	40 ns	1.8 V	600 V	150 °C	-55 °C

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General part information

Diode 600 V 30A Through Hole TO-247AC

Technical documentation and resources