Discrete Semiconductor Products

SDUR30Q60

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DIODE GEN PURP 600V 30A TO220AC

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Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 30A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SDUR30Q60

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	40 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Reverse Recovery Time (trr)
SMC Diode Solutions SDUR30Q60	200 mA 500 ns	1.8 V	TO-220-2	Through Hole	10 µA	30 A	-55 °C	150 °C	600 V	TO-220AC	Standard	40 ns
SMC Diode Solutions SDUR30Q60W	200 mA 500 ns	1.8 V	TO-247-2	Through Hole	10 µA	30 A	-55 °C	150 °C	600 V	TO-247AC	Standard	40 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 30A Through Hole TO-220AC

Technical documentation and resources