Discrete Semiconductor Products

SIHB21N80AE-GE3

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MOSFET N-CH 800V 17.4A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 800V 17.4A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHB21N80AE-GE3

Current - Continuous Drain (Id) @ 25°C	17.4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	1388 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	32 W
Rds On (Max) @ Id, Vgs	235 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIHB21N80AE-GE3	Surface Mount	235 mOhm	800 V	17.4 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	150 °C	32 W	30 V	10 V	MOSFET (Metal Oxide)	1388 pF	N-Channel	TO-263 (D2PAK)	72 nC	4 V

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General part information

N-Channel 800 V 17.4A (Tc) 32W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources