SIHB21 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 800V 17.4A D2PAK
| Part | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | 235 mOhm | 800 V | 17.4 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -55 °C | 150 °C | 32 W | 30 V | 10 V | MOSFET (Metal Oxide) | 1388 pF | N-Channel | TO-263 (D2PAK) | 72 nC | 4 V |