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Microchip Technology-GRP-A-DATA-JAN2N2904 GP BJT Trans GP BJT PNP 40V 0.6A 600mW 3-Pin TO-39 Bag
Discrete Semiconductor Products

2N5415S

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Microchip Technology

TRANS GP BJT PNP 200V 1A 750MW 3-PIN TO-39 BAG

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Microchip Technology-GRP-A-DATA-JAN2N2904 GP BJT Trans GP BJT PNP 40V 0.6A 600mW 3-Pin TO-39 Bag
Discrete Semiconductor Products

2N5415S

Active
Microchip Technology

TRANS GP BJT PNP 200V 1A 750MW 3-PIN TO-39 BAG

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N5415S
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce30
Mounting TypeThrough Hole
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]750 mW
Supplier Device PackageTO-39
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 12$ 26.60
DigikeyBulk 100$ 29.95
Microchip DirectN/A 1$ 32.26
NewarkEach 100$ 29.95
500$ 28.80

Description

General part information

JANTX2N5415-Transistor Series

This family of 2N5415 and 2N5416 epitaxial planar PNP transistors are military qualified up to a JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) and low profile surfacemount U4, U4 and UA packaging.

Documents

Technical documentation and resources