
DS1250W-150+
ObsoleteIC NVSRAM 4MBIT PARALLEL 32EDIP
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DS1250W-150+
ObsoleteIC NVSRAM 4MBIT PARALLEL 32EDIP
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Technical Specifications
Parameters and characteristics for this part
| Specification | DS1250W-150+ |
|---|---|
| Access Time | 150 ns |
| Memory Format | NVSRAM |
| Memory Interface | Parallel |
| Memory Organization | 512 K |
| Memory Size | 512 kB |
| Memory Type | Non-Volatile |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 70 °C |
| Operating Temperature [Min] | 0 °C |
| Package / Case | 32-DIP Module |
| Package / Case | 15.24 mm |
| Package / Case | 0.6 in |
| Supplier Device Package | 32-EDIP |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 3 V |
| Write Cycle Time - Word, Page [custom] | 150 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 83.89 | 1m+ |
Description
General part information
DS1250W Series
The DS1250W 3.3V 4096k NV SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1250W devices can be used in place of existing 512k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1250W devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
Documents
Technical documentation and resources