Specification	DS1250WP-100IND+

Access Time	100 ns
Memory Format	NVSRAM
Memory Interface	Parallel
Memory Organization	512 K
Memory Size	512 kB
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	34-PowerCap™ Module
Supplier Device Package	34-PowerCap Module
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	3 V
Write Cycle Time - Word, Page [x]	100 ns
Write Cycle Time - Word, Page [y]	100 ns

DS1250W Series

Part	Memory Type	Memory Organization	Memory Size	Access Time	Write Cycle Time - Word, Page [y]	Write Cycle Time - Word, Page [x]	Memory Interface	Mounting Type	Package / Case	Technology	Supplier Device Package	Memory Format	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case	Write Cycle Time - Word, Page [custom]
Analog Devices Inc./Maxim Integrated DS1250WP-100IND+	Non-Volatile	512 K	512 kB	100 ns	100 ns	100 ns	Parallel	Surface Mount	34-PowerCap™ Module	NVSRAM (Non-Volatile SRAM)	34-PowerCap Module	NVSRAM	3.6 V	3 V	85 C	-40 ¯C
Analog Devices Inc./Maxim Integrated DS1250W-100IND	Non-Volatile	512 K	512 kB	100 ns	100 ns	100 ns	Parallel	Through Hole	32-DIP Module	NVSRAM (Non-Volatile SRAM)	32-EDIP	NVSRAM	3.6 V	3 V	85 C	-40 ¯C	15.24 mm	0.6 in
Analog Devices Inc./Maxim Integrated DS1250WP-150	Non-Volatile	512 K	512 kB	150 ns			Parallel	Surface Mount	34-PowerCap™ Module	NVSRAM (Non-Volatile SRAM)	34-PowerCap Module	NVSRAM	3.6 V	3 V	70 °C	0 °C			150 ns
Analog Devices Inc./Maxim Integrated DS1250W-100+	Non-Volatile	512 K	512 kB	100 ns	100 ns	100 ns	Parallel	Through Hole	32-DIP Module	NVSRAM (Non-Volatile SRAM)	32-EDIP	NVSRAM	3.6 V	3 V	70 °C	0 °C	15.24 mm	0.6 in
Analog Devices Inc./Maxim Integrated DS1250WP-100+	Non-Volatile	512 K	512 kB	100 ns	100 ns	100 ns	Parallel	Surface Mount	34-PowerCap™ Module	NVSRAM (Non-Volatile SRAM)	34-PowerCap Module	NVSRAM	3.6 V	3 V	70 °C	0 °C
Analog Devices Inc./Maxim Integrated DS1250W-100IND+	Non-Volatile	512 K	512 kB	100 ns	100 ns	100 ns	Parallel	Through Hole	32-DIP Module	NVSRAM (Non-Volatile SRAM)	32-EDIP	NVSRAM	3.6 V	3 V	85 C	-40 ¯C	15.24 mm	0.6 in
Analog Devices Inc./Maxim Integrated DS1250W-150+	Non-Volatile	512 K	512 kB	150 ns			Parallel	Through Hole	32-DIP Module	NVSRAM (Non-Volatile SRAM)	32-EDIP	NVSRAM	3.6 V	3 V	70 °C	0 °C	15.24 mm	0.6 in	150 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+
		298	$ 0.00

Description

General part information

DS1250W Series

The DS1250W 3.3V 4096k NV SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1250W devices can be used in place of existing 512k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1250W devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Documents

Technical documentation and resources

Package Drawing - PowerCap Module

Package Drawing

DS1250W: 3.3V 4096k Nonvolatile SRAM Data Sheet (Rev.4)

Data Sheet