Discrete Semiconductor Products

SIHG180N60E-GE3

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MOSFET N-CH 600V 19A TO247AC

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Discrete Semiconductor Products

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MOSFET N-CH 600V 19A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG180N60E-GE3

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1085 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIHG180N60E-GE3	-55 °C	150 °C	1085 pF	10 V	30 V	5 V	Through Hole	TO-247AC	TO-247-3	600 V	N-Channel	19 A	156 W	MOSFET (Metal Oxide)	180 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 19A (Tc) 156W (Tc) Through Hole TO-247AC

Technical documentation and resources