SIHG180 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 19A TO247AC
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Package / Case | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Technology | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 1085 pF | 10 V | 30 V | 5 V | Through Hole | TO-247AC | TO-247-3 | 600 V | N-Channel | 19 A | 156 W | MOSFET (Metal Oxide) | 180 mOhm |