Discrete Semiconductor Products

IRLZ24LPBF

LTB

MOSFET N-CH 60V 17A TO262-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 17A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRLZ24LPBF

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	3.7 W, 60 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division IRLZ24LPBF	870 pF	TO-262-3	4 V 5 V	2 V	10 V	N-Channel	MOSFET (Metal Oxide)	I2PAK TO-262-3 Long Leads TO-262AA	100 mOhm	Through Hole	18 nC	60 V	3.7 W 60 W	17 A	-55 °C	175 ░C
Vishay General Semiconductor - Diodes Division IRLZ24S	870 pF	TO-263 (D2PAK)	4 V 5 V	2 V	10 V	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 mOhm	Surface Mount	18 nC	60 V	3.7 W 60 W	17 A	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 17A (Tc) 3.7W (Ta), 60W (Tc) Through Hole TO-262-3

Technical documentation and resources