IRLZ24 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 17A TO262-3
| Part | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Vgs (Max) | FET Type | Technology | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 870 pF | TO-262-3 | 4 V 5 V | 2 V | 10 V | N-Channel | MOSFET (Metal Oxide) | I2PAK TO-262-3 Long Leads TO-262AA | 100 mOhm | Through Hole | 18 nC | 60 V | 3.7 W 60 W | 17 A | -55 °C | 175 ░C |
Vishay General Semiconductor - Diodes Division | 870 pF | TO-263 (D2PAK) | 4 V 5 V | 2 V | 10 V | N-Channel | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 100 mOhm | Surface Mount | 18 nC | 60 V | 3.7 W 60 W | 17 A | -55 °C | 175 ░C |