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TO-92-3(StandardBody),TO-226_straightlead
Discrete Semiconductor Products

BS270

Active
ON Semiconductor

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 400MA, 2Ω

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Search across all available documentation for this part.

DocumentsPackage Drawing-135AN-TO-92 3 4.82x4.76Datasheet+1
TO-92-3(StandardBody),TO-226_straightlead
Discrete Semiconductor Products

BS270

Active
ON Semiconductor

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 400MA, 2Ω

Deep-Dive with AI

DocumentsPackage Drawing-135AN-TO-92 3 4.82x4.76Datasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationBS270
Current - Continuous Drain (Id) @ 25°C400 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-226-3, TO-92-3
Power Dissipation (Max) [Max]625 mW
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageTO-92-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 0.58
10$ 0.36
100$ 0.23
500$ 0.17
1000$ 0.16
2000$ 0.14
5000$ 0.12
10000$ 0.11
50000$ 0.10
ON SemiconductorN/A 1$ 0.10

Description

General part information

BS270 Series

This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.