BS270 Series

N-Channel Enhancement Mode Field Effect Transistor 60V, 400mA, 2Ω

Catalog

N-Channel Enhancement Mode Field Effect Transistor 60V, 400mA, 2Ω

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology
ON Semiconductor BS270	-55 °C	150 °C	2.5 V	625 mW	TO-226-3 TO-92-3	Through Hole	2 Ohm	TO-92-3	60 V	N-Channel	20 V	400 mA	50 pF	4.5 V 10 V	MOSFET (Metal Oxide)

Catalog

N-Channel Enhancement Mode Field Effect Transistor 60V, 400mA, 2Ω

Key Features

• 400 mA, 60 V. RDS(ON)= 2 Ω @ VGS= 10 V.

• High density cell design for extremely low RDS(ON).

• Voltage controlled small signal switch.

• Rugged and reliable.

• High saturation current capability.

Description

This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.