STP5NK50Z
ActiveN-CHANNEL 500 V, 1.22 OHM TYP., 4.4 A SUPERMESH POWER MOSFET IN TO-220 PACKAGE
STP5NK50Z
ActiveN-CHANNEL 500 V, 1.22 OHM TYP., 4.4 A SUPERMESH POWER MOSFET IN TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP5NK50Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.4 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 70 W |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP5NK50Z Series
The SuperMESH series is obtained through an extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh productsTYPICAL RDS(on) = 1.22EXTREMELY HIGH dv/dt CAPABILITYIMPROVED ESD CAPABILITY100% AVALANCHE RATEDGATE CHARGE MINIMIZEDVERY LOW INTRINSIC CAPACITANCESVERY GOOD MANUFACTURING REPEATIBILITY
Documents
Technical documentation and resources