Specification	FDMS0306AS

Current - Continuous Drain (Id) @ 25°C	26 A, 49 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Input Capacitance (Ciss) (Max) @ Vds	3550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	59 W, 2.5 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS0306AS Series

N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.4mΩ

Part	Vgs (Max)	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDMS0306AS	20 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel	57 nC	2.5 W 59 W	30 V	8-PowerTDFN	Surface Mount	26 A 49 A	3550 pF	2.4 mOhm	3 V	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.37
		10	$ 1.12
		100	$ 0.87
		500	$ 0.74
		1000	$ 0.60
	Digi-Reel®	1	$ 1.37
		10	$ 1.12
		100	$ 0.87
		500	$ 0.74
		1000	$ 0.60
	Tape & Reel (TR)	3000	$ 0.56
		6000	$ 0.54
		9000	$ 0.51
Newark	Each (Supplied on Full Reel)	3000	$ 0.68
		6000	$ 0.61
		12000	$ 0.55
		18000	$ 0.53
		30000	$ 0.52
ON Semiconductor	N/A	1	$ 0.35

Description

General part information

FDMS0306AS Series

The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.