Discrete Semiconductor Products

TSM260P02CX6 RFG

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TRANS MOSFET P-CH 20V 6.5A 6-PIN SOT-26 T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET P-CH 20V 6.5A 6-PIN SOT-26 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	TSM260P02CX6 RFG

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1670 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	1.56 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	SOT-26
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type
Taiwan Semiconductor Corporation TSM260P02CX6 RFG	SOT-26	10 V	26 mOhm	1670 pF	1 V	1.56 W	150 °C	-55 °C	P-Channel	SOT-23-6	20 V	MOSFET (Metal Oxide)	6.5 A	19.5 nC	1.8 V	4.5 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 6.5A (Tc) 1.56W (Tc) Surface Mount SOT-26

Technical documentation and resources