Discrete Semiconductor Products

BS108/01,126

Obsolete

MOSFET N-CH 200V 300MA TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 300MA TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	BS108/01,126

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	2.8 V, 2.8 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	120 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type
Freescale Semiconductor - NXP BS108,126	TO-92-3	200 V	1 W	MOSFET (Metal Oxide)	N-Channel	300 mA	20 V	120 pF	5 Ohm	2.8 V 2.8 V	-55 °C	150 °C	TO-226-3 TO-92-3	Through Hole
Freescale Semiconductor - NXP BS108/01,126	TO-92-3	200 V	1 W	MOSFET (Metal Oxide)	N-Channel	300 mA	20 V	120 pF	5 Ohm	2.8 V 2.8 V	-55 °C	150 °C	TO-226-3 TO-92-3	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 300mA (Ta) 1W (Ta) Through Hole TO-92-3

Technical documentation and resources