BS10 Series

Catalog

MOSFET N-CH 200V 300MA TO92-3

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type
Freescale Semiconductor - NXP BS108,126	TO-92-3	200 V	1 W	MOSFET (Metal Oxide)	N-Channel	300 mA	20 V	120 pF	5 Ohm	2.8 V 2.8 V	-55 °C	150 °C	TO-226-3 TO-92-3	Through Hole
Freescale Semiconductor - NXP BS108/01,126	TO-92-3	200 V	1 W	MOSFET (Metal Oxide)	N-Channel	300 mA	20 V	120 pF	5 Ohm	2.8 V 2.8 V	-55 °C	150 °C	TO-226-3 TO-92-3	Through Hole