S10CJHM3/I

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DIODE GEN PURP 600V 10A DO214AB

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 10A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	S10CJHM3/I

Capacitance @ Vr, F	79 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	5 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Mounting Type	Current - Average Rectified (Io)	Speed	Speed	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Grade
Vishay General Semiconductor - Diodes Division S10CM-M3/I	Surface Mount	10 A	Standard Recovery >500ns	200 mA	Standard	150 °C	-55 °C	DO-214AB SMC	5 µs	DO-214AB (SMC)	1 V	79 pF	10 çA	1000 V
Vishay General Semiconductor - Diodes Division S10CMHM3/I	Surface Mount	10 A	Standard Recovery >500ns	200 mA	Standard	150 °C	-55 °C	DO-214AB SMC	5 µs	DO-214AB (SMC)	1 V	79 pF	10 çA	1000 V	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division S10CJHM3/I	Surface Mount	10 A	Standard Recovery >500ns	200 mA	Standard	150 °C	-55 °C	DO-214AB SMC	5 µs	DO-214AB (SMC)	1 V	79 pF	10 µA	600 V	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 10A Surface Mount DO-214AB (SMC)

Technical documentation and resources