S10 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 10A DO214AB
| Part | Mounting Type | Current - Average Rectified (Io) | Speed | Speed | Technology | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Reverse Recovery Time (trr) | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | 10 A | Standard Recovery >500ns | 200 mA | Standard | 150 °C | -55 °C | DO-214AB SMC | 5 µs | DO-214AB (SMC) | 1 V | 79 pF | 10 çA | 1000 V | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 10 A | Standard Recovery >500ns | 200 mA | Standard | 150 °C | -55 °C | DO-214AB SMC | 5 µs | DO-214AB (SMC) | 1 V | 79 pF | 10 çA | 1000 V | AEC-Q101 | Automotive |
Vishay General Semiconductor - Diodes Division | Surface Mount | 10 A | Standard Recovery >500ns | 200 mA | Standard | 150 °C | -55 °C | DO-214AB SMC | 5 µs | DO-214AB (SMC) | 1 V | 79 pF | 10 µA | 600 V | AEC-Q101 | Automotive |