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APT2X60D60J
Discrete Semiconductor Products

MSC025SMA120J

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Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 77A I(D), 1200V, 0.031OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET

APT2X60D60J
Discrete Semiconductor Products

MSC025SMA120J

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 77A I(D), 1200V, 0.031OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET

Technical Specifications

Parameters and characteristics for this part

SpecificationMSC025SMA120J
Current - Continuous Drain (Id) @ 25°C77 A
Drain to Source Voltage (Vdss)1200 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]232 nC
Input Capacitance (Ciss) (Max) @ Vds3020 pF
Mounting TypeChassis Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-227-4, miniBLOC
Power Dissipation (Max)278 W
Rds On (Max) @ Id, Vgs31 mOhm
Supplier Device PackageSOT-227 (ISOTOP®)
Vgs (Max) [Max]25 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id [Max]2.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 57.18
25$ 52.73
100$ 43.09
Microchip DirectTUBE 1$ 57.18
10$ 52.73
100$ 45.88
500$ 42.80
NewarkEach 10$ 52.73
100$ 45.88
500$ 42.80

Description

General part information

MSC025SMA120 Series

MSC025SMA120 is part of our newest family of mSiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.