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C04-029 MB
Discrete Semiconductor Products

DN3525N8-G

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Microchip Technology

250V, 6 OHM, N-CHANNEL, DEPLETION MODE, VERTICAL DMOS FET

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C04-029 MB
Discrete Semiconductor Products

DN3525N8-G

Active
Microchip Technology

250V, 6 OHM, N-CHANNEL, DEPLETION MODE, VERTICAL DMOS FET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDN3525N8-G
Current - Continuous Drain (Id) @ 25°C360 mA
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)0 V
FET FeatureDepletion Mode
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-243AA
Rds On (Max) @ Id, Vgs6 Ohm
Supplier Device PackageTO-243AA (SOT-89)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.88
25$ 0.73
100$ 0.65
Digi-Reel® 1$ 0.88
25$ 0.73
100$ 0.65
Tape & Reel (TR) 2000$ 0.65
Microchip DirectT/R 1$ 0.88
25$ 0.73
100$ 0.65
1000$ 0.64
5000$ 0.63

Description

General part information

DN3525 Series

DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.