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Discrete Semiconductor Products

FGA6560WDF

Obsolete
ON Semiconductor

IGBT, 650 V, 60 A FIELD STOP TRENCH

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Discrete Semiconductor Products

FGA6560WDF

Obsolete
ON Semiconductor

IGBT, 650 V, 60 A FIELD STOP TRENCH

Technical Specifications

Parameters and characteristics for this part

SpecificationFGA6560WDF
Current - Collector (Ic) (Max)120 A
Current - Collector Pulsed (Icm)180 A
Gate Charge84 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-65-3, TO-3P-3
Power - Max [Max]306 W
Reverse Recovery Time (trr)110 ns
Supplier Device PackageTO-3PN
Switching Energy2.46 mJ, 520 µJ
Td (on/off) @ 25°C71 ns, 25.6 ns
Test Condition6 Ohm, 15 V, 400 V, 60 A
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FGA6560WDF Series

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rdgeneration IGBTs offer the optimum performance for Welder applications where low conduction and switching losses are essential.