FGA6560WDF Series

IGBT, 650 V, 60 A Field Stop Trench

Catalog

IGBT, 650 V, 60 A Field Stop Trench

Part	Switching Energy	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	IGBT Type	Td (on/off) @ 25°C	Gate Charge	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Package / Case	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Test Condition	Power - Max [Max]
ON Semiconductor FGA6560WDF	2.46 mJ 520 µJ	650 V	120 A	Trench Field Stop	25.6 ns 71 ns	84 nC	2.3 V	TO-3PN	SC-65-3 TO-3P-3	180 A	110 ns	-55 °C	175 ░C	Through Hole	6 Ohm 15 V 60 A 400 V	306 W

Catalog

IGBT, 650 V, 60 A Field Stop Trench

Key Features

• Maximum Junction Temperature : TJ=175°C

• Positive Temperaure Co-efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat)=1.8 V(Typ.) @ IC= 60 A

• 100% of the Parts Tested for ILM(1)

• High Input Impedance

• Fast Switching

• RoHS Compliant

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rdgeneration IGBTs offer the optimum performance for Welder applications where low conduction and switching losses are essential.