Discrete Semiconductor Products

RJK03P7DPA-00#J5A

Obsolete

BUILT IN SBD N CHANNEL POWER MOSFET

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Discrete Semiconductor Products

Obsolete

BUILT IN SBD N CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03P7DPA-00#J5A

Configuration	2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs	7.1 nC
Input Capacitance (Ciss) (Max) @ Vds	1190 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN Exposed Pad
Power - Max	10 W, 20 W
Rds On (Max) @ Id, Vgs	9.4 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)

Built In Sbd N Channel Power MOSFET

Part	Package / Case	Mounting Type	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Technology	Rds On (Max) @ Id, Vgs	Power - Max	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package
Renesas Electronics Corporation RJK03P7DPA-00#J5A	8-WFDFN Exposed Pad	Surface Mount	4.5V Drive Logic Level Gate	7.1 nC	150 °C	MOSFET (Metal Oxide)	9.4 mOhm	10 W 20 W	2 N-Channel (Half Bridge)	1190 pF	30 V	8-WPAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	204	$ 1.48

General part information

The RJK03P7DPA is a Built In Sbd N Channel Power MOSFET.

Technical documentation and resources