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Built In Sbd N Channel Power MOSFET
Description
AI
The RJK03P7DPA is a Built In Sbd N Channel Power MOSFET.
Built In Sbd N Channel Power MOSFET
Built In Sbd N Channel Power MOSFET
| Part | Package / Case | Mounting Type | FET Feature | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Technology | Rds On (Max) @ Id, Vgs | Power - Max | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 8-WFDFN Exposed Pad | Surface Mount | 4.5V Drive Logic Level Gate | 7.1 nC | 150 °C | MOSFET (Metal Oxide) | 9.4 mOhm | 10 W 20 W | 2 N-Channel (Half Bridge) | 1190 pF | 30 V | 8-WPAK |