Catalog
Built In Sbd N Channel Power MOSFET
Description
AI
The RJK03P7DPA is a Built In Sbd N Channel Power MOSFET.
Beta
⌘K
Built In Sbd N Channel Power MOSFET
Built In Sbd N Channel Power MOSFET
| Part | Technology | Rds On (Max) @ Id, Vgs | Mounting Type | Configuration | FET Feature | FET Feature | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | Package / Case | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | MOSFET (Metal Oxide) | 9.4 mOhm | Surface Mount | 2 N-Channel | 4.5 V | Logic Level Gate | 7.1 nC | 10 W 20 W | 8-WFDFN Exposed Pad | 150 °C | 1190 pF | 8-WPAK | 30 V |