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Discrete Semiconductor Products

JANTX2N3771

Active
Microchip Technology

NPN SILICON HIGH-POWER 40V TO 60V, 20A TO 30A

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Search across all available documentation for this part.

Discrete Semiconductor Products

JANTX2N3771

Active
Microchip Technology

NPN SILICON HIGH-POWER 40V TO 60V, 20A TO 30A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N3771
Current - Collector (Ic) (Max) [Max]30 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]15
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-3, TO-204AA
Power - Max [Max]6 W
QualificationMIL-PRF-19500/518
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic4 V
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 216.32
Microchip DirectN/A 1$ 232.96
NewarkEach 100$ 216.32
500$ 208.00

Description

General part information

JANTX2N3771-Transistor Series

This specification covers the performance requirements for NPN silicon, high-power 2N3771 and 2N3772 transistors for use in high-speed power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/413.

Documents

Technical documentation and resources