Specification	FDP2532

Current - Continuous Drain (Id) @ 25°C	79 A, 8 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	107 nC
Input Capacitance (Ciss) (Max) @ Vds	5870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDP2532 Series

N-Channel PowerTrench<sup>®</sup> MOSFET 150V, 79A, 16mΩ

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
ON Semiconductor FDP2552	4 V	150 W	2800 pF	Through Hole	N-Channel	20 V	5 A 37 A	-55 °C	175 ░C	51 nC	150 V	MOSFET (Metal Oxide)	36 mOhm	TO-220-3	6 V 10 V	TO-220-3
ON Semiconductor FDP2570	4 V	93 W	1911 pF	Through Hole	N-Channel	20 V	22 A	-65 °C	175 ░C		150 V	MOSFET (Metal Oxide)	80 mOhm	TO-220-3	6 V 10 V	TO-220-3	56 nC
ON Semiconductor FDP2532	4 V		5870 pF	Through Hole	N-Channel	20 V	8 A 79 A	-55 °C	175 ░C	107 nC	150 V	MOSFET (Metal Oxide)	16 mOhm	TO-220-3	6 V 10 V	TO-220-3		310 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel PowerTrench®MOSFET 150 V, 79 A, 16 mΩ

Technical documentation and resources